updated 06:55 am EDT, Tue October 28, 2008
43nm SLC chips announced
Toshiba has announced higher density, faster memory chips in a new lineup of 43nm single-level cell (SLC) NAND flash memory, featuring 2GB, 4GB and 8GB individual chips. The 43 nanometer process allows Toshiba to deliver double the density of its previous 56nm process, while also delivering SLC speeds, which are approximately 2.5x faster than the more common, denser but historically slower MLC (Multi-Level Cell) memory.
The new chipsets will be geared toward embedded memory in mobile products that call for large quantities of fast memory, such as mobile phones, flat panel HDTVs, and servers, as well as mobile audio-video devices. The new chipsets are planned for market in the first quarter of 2009.
Toshiba hasn't named customers but supplies both itself as well as Apple's handheld devices; multiple chips are often stacked together in a single package and should enable capacities of 16GB and higher depending on the hardware.