Samsung develops 40nm DRAM technology
updated 03:10 pm EST, Wed February 4, 2009
40nm DRAM developed
Korea's Samsung has produced what it claims to be the world's first 40nm DRAM memory. Though only available in a 1GB DDR2 format, the memory is already said to have been certified for Intel's GM45 Express chipset, which was made available for notebooks late last year. The new DRAM marks a shift down in size from 50nm, and should theoretically consume less electricity, generating less heat as a side effect.
The company says it is accelerating migration to 40nm, and expects mass production to occur within about a year. A 2GB DDR3 module is slated to be ready before the end of 2009, and Samsung also notes that the production technology will be instrumental in shifting from DDR3 to DDR4 as the peak standard. DDR4 SDRAM is, in general, not expected to reach the market until 2012.
