SanDisk, in collaboration with Toshiba, at the International Solid-State Circuits Conference announced its latest memory technology that combines X3 and 32 nanometer manufacturing processes. The multi-level cell NAND flash is designed to offer 32Gb capacity with three bits of memory per cell, all in a package small enough to fit the microSD memory card format.

The company claims that the 32nm 32Gb X3 offers the highest density microSD memory die, doubling the capacity of a microSD chip that utilizes 43nm technology. The use of microSD memory has increased proportionately with the sales of mobile phones or media players that offer expandable high-capacity storage options.

SanDisk and Toshiba earlier today announced plans to release another ultra-dense form of NAND flash storage, X4. The technology uses a new memory controller and fits four bits of data onto each cell, while maintaining transfer speeds of 7.8MB per second. The components can be used to push capacities up to 64GB, doubling size of the 32GB packages that Toshiba began producing late last year.

The companies plan to begin production for the 32nm 32Gb X3 memory in the second half of 2009. Although the manufacturers have not yet announced possible third-party applications, Toshiba has supplied memory components to Apple for use in the iPhone or iPod touch.