Samsung produces 30nm, low-power DDR3 RAM

updated 08:10 am EST, Mon February 1, 2010

Samsung 30nm RAM saves energy, costs less


Samsung today unveiled a potential breakthrough in its Green DDR3 memory by developing its first examples built on a 30 nanometer (nm) process. The size shrink allows 2 gigabit (256MB) chips that use 30 percent less power than 50nm DDR3. In a typical notebook, Samsung estimates that a 4GB RAM stick with the new memory would consume just 3W of energy each hour and extend battery life that much further.

As more chips can be produced on a given wafer, the Korean company also believes that it's about 60 percent more efficient to make 30nm memory than its 50nm or 60nm predecessors and should drop in price as a result. In recent months, 4GB DDR3 sticks have often been prohibitively expensive for non-professional upgrades.

The memory is still in its early stages and won't be in volume production until the second half of the year.


By Electronista Staff

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Previous Comments

  1. tonton

    Senior User

    Joined: Mar 2001

    +1

    Good news.

    Looks like we'll finally see a reasonably priced 8GB kit for our MacBooks within half a year.


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