Researchers develop first junctionless transistor
updated 05:20 pm EST, Mon February 22, 2010
Junctionless transistor prototype made by Tyndall
Scientists at the Tyndall National Institute in Ireland have built what they say is the first connection-less transistor in the world. This is significant as it could change the way 10-nanomemter semiconductors are made, simplifying the process. The basic idea involves a control gate built around a silicon wire that is a few dozen atoms in diameter. The gate can squeeze the electron channel to nothing and not require junctions or doping to do so.
The team was headed up by Professor Jean-Pierre Colinge, and advantages of the resulting product are claimed to include a near-ideal sub-threshold slope -- the rate at which the current between drain and source differs -- as well as ultra-low leakage currents and less degradation with gate voltage and temperature than current transistors. The new gates can also have CMOS compatibility.
The current flow in the thin silicon wire is controlled by a structure that resembles a wedding ring and can electrically squeeze the silicon wire. The researchers mimic this operation to the way the flow of water is stopped in a hose by squeezing it. Professor Colinge went on to say that his creation has many similarities to the ideal semiconductor transistor structure originally proposed in 1925 but that no one was able to manufacture since.
When this innovative transistor can be seen in production is not known, but isn't likely for a few years, as the technology needs to move from prototype stage to more mainstream use. [via EETimes]







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