Samsung intros faster DDR4 RAM modules
updated 11:15 pm EST, Mon January 3, 2011
New tech transfers data at 2.13 Gbps
Samsung has introduced its first DDR4 DRAM memory modules, which are manufactured using 30nm-class process technology. The new chips are claimed to offer significant improvements to power efficiency and overall performance, reaching data transfer speeds of up to 2.133 gigabits per second at 1.2V. The new circuit architecture is claimed to be capable of scaling up to 3.2Gbps at higher voltages.
The performance compares to 30nm DDR3 modules that reach 1.6Gbps at 1.35V or 1.5V. When used in notebooks, the DDR4 modules are said to offer a 40 percent reduction in power consumption compared to a 1.5V DDR3 module.
Samsung has already distributed 2GB DDR4 modules to a controller maker for testing, however a mass-production schedule has yet to be announced.
