Penn State, IQE working on quantum-tunneling transistors
updated 04:40 pm EST, Mon December 12, 2011
Penn State shows ultra-efficient transistors
Researchers from Penn State have detailed their work on ultra-efficient transistors that have much lower power draws when they are switching or in an idle state. Along with epitaxial wafer maker IQE, the two are working on MOSFETs that will need less than the usual one volt required to gradually turn on a transistor.
The experimental chips use a tunneling field effect transistor made from different semiconductor materials. The unique materials and architecture result in an instant on/off capability that consumes just 300mV, or 30 percent of modern transistors. The two materials are Indium Gallium Arsenide and Gallium Arsenic Antimonide. At the same time, a 650 percent increase in drive current is said to have been accomplished. The Hetero Tunnel FETs offer a 7.6-fold improvement in drive current over the control sample, the engineer in charge, doctoral candidate Dheeraj Mohata said.
The research could result in ever-more efficient notebooks that have the processing power of a desktop coupled with a long battery life. Alternately, a balance can be struck that tips towards longer battery life at the price of power or vice versa. Ever smaller gadgets that are lighter in weight thanks to smaller batteries are also possible. [via PhysOrg]
