updated 04:04 pm EDT, Wed May 9, 2012
Microsoft takes interest in 3D memory chip technology
Microsoft has joined the Hybrid Memory Cube Consortium. Fronted by Micron, Samsung, and IBM, the HMCC aims to create more efficient memory for high-performance computing and other similar applications, using increased bandwidth compared to what current memory architectures can provide.
The Hybrid Memory Cube joins vertical stacking called Through-Silicon Vias with 32 nanometer, high-K metal gate process technology and Micron's latest DRAM. Prototypes are said to run at 128GBps, about 10 times the bandwidth of current chips. The Consortium also claims a 90 percent reduction in footprint, and 70 percent higher energy efficiency.
Researchers expect the technology to be usable in a few years time, with a draft specification being finalized by the end of this year.