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Samsung begins mass producing 128Gb 3-bit MLC NAND flash

updated 03:07 pm EDT, Sat April 13, 2013

New NAND memory chips produced using 10nm process

Samsung announced this week that it had begun mass production of 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chips. The South Korean electronics conglomerate is producing the new chips using a 10nm-class process technology. The chips will help Samsung produce its highest-density, single layer memory to date and will likely soon find its way into embedded NAND storage and solid state drives.

"By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well-situated to meet growing global customer needs," Samsung executive Young-Hyun Jun said in a statement released to Tom's Hardware. "The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high-density memory storage market."

The new flash chips will likely find their way into notebooks, PCs, and servers, as well as an array of mobile devices. The 128Gb NAND chips will allow Samsung to increase production of SSDs with densities in excess of 500GB. Samsung aims to leverage such technologies to hasten the transition of storage drives in notebook computers from traditional hard drives to SSDs.



By Electronista Staff
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