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Samsung ramping production of 20nm 4Gb LPDDR3 mobile DRAM

updated 07:59 am EDT, Tue April 30, 2013

New Samsung mobile DRAM doubles speed of previous generation

Samsung Semiconductor is ramping production of new 20nm 4 gigabit LPDDR3 mobile DRAM, the company has announced. The company says that it is the first to produce the ultra high speed low power double data rate 3 DRAM claiming that its performance is comparable to that which can be achieved from desktop computer RAM. According to Samsung, the bandwidth of the new chips is up to double that of previous designs.

The new memory module is capable of transmitting data at up to 2,133 megabits per second per pin making it possible to transmit three 1080p videos in one second when embedded in a mobile device (not withstanding other system architecture bottlenecks). This is 30 percent faster than the its older LPDDR2 type DRAM, while simultaneously delivering 20 percent power savings.

The main advantage of the new process is that OEM's can have a 2GB package that includes four of Samsung's new chips in a single package a height of just 0.8 millimeters. This makes it particularly well-suited to the increasingly thin designs being produced by manufacturers, while still allowing for good internal space for other components.



By Electronista Staff
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