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Adesto details new CBRAM, shows radiation and temperature resistance

updated 06:26 pm EST, Wed December 11, 2013

New RAM can retain data for a minimum of 800 hours at 200C

Memory solutions provider Adesto Technologies has specified the high-temperature data retention characteristics of its proprietary resistive random-access memory technology known as CBRAM in a paper presented at the 2013 International Electron Devices Meeting in Washington, DC earlier today. The paper examines the challenges high-temperature represents to non-volatile resistive memories, and shows how the new kind of RAM overcomes these challenges while preserving the speed, low-voltage and ultra-low power characteristics inherent to the form.

CBRAM is an emerging memory technology which can be integrated in standard CMOS processes, function as a discrete memory device or be embedded in microcontrollers or System-on-Chip (SOC) products like smartphones, tablets, and in-dash entertainment systems. The presentation demonstrates the ability of non-volatile CBRAM memory cells to preserve stored data at 200 degrees Celsius (392 degrees Fahrenheit) for more than 800 hours.

As a side effect of the temperature hardening, CBRAM memory also demonstrates tolerance to gamma radiation. The capability allows the memory products to be incorporated in applications requiring sterile components or deep integration into nuclear technologies normally contained well outside the source's shielding.



By Electronista Staff
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