updated 06:54 am EST, Mon December 30, 2013
High per-pin data rate, low power touted in new mobile RAM chips
Samsung has revealed its first 8 gigabit (1GB) low-power DDR4 (LPDDR4) mobile DRAM, something Samsung believes to be the largest density available for DRAM components today. Built using a 20-nanometer process, the single-layer chip could lead to the company offering smartphones and mobile devices with 4GB of RAM in the future, eclipsing current models such as the Galaxy Tab 10.1 2014 which currently use 3GB of RAM.
The new chip could be stacked inside a four-layer module, allowing it to offer 4GB of storage, suggests Samsung Tomorrow. The module is said to provide 50-percent higher performance compared to LPDDR3 or DDR3 memory, while consuming 40-percent less energy at 1.1 volts. Using a Low Voltage Swing Terminated Logic (LVSTL) interface, it is capable of a transfer rate per pin of 3,200 Mbps, double that of 20nm LPDDR3 DRAM currently being produced.
Aside from large-screen UHD smartphones and tablets, Samsung is looking to employ the chip in upcoming ultra-slim notebooks, though it is unclear how far into 2014 it will be until the first products using the memory gets unveiled.