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Samsung makes RRAM 1m times more rewritable than flash

07/12, 10:15pm

Breakthrough in Resistive Random Access Memory

Samsung has announced that it has achieved a significant breakthrough in resistive random access memory (RRAM) technology. The company's engineers and scientists have reportedly made significant improvements in durability, enabling RRAM prototypes to switch between writing and deleting up to a trillion times. The milestone is said to be approximately a million times higher than standard flash-memory durability.

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